Datu lapā PDF Par 2SC3600D meklēšanas rezultāti

• Daļa Nr: 2SC3600D

  Ražotājs:
  

  Temperatūra:
  

  Apraksts
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SC3600D

DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:

Saistītās puses nav

• 2SC3600 Sanyo Semicon Device
  high-Definition Display Video Output Applications
• 2SC3600C
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3600D
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3600E
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3600F
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3601 Sanyo
  PNP/NPN Epitaxial Planar Silicon Transistors
• 2SC3601C
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3601D
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3601E
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3601F
  TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126
• 2SC3602
  TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X
• 2SC3603 NEC[NEC]
  EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION
• 2SC3604 NEC[NEC]
  EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION
• 2SC3605 Toshiba
  VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS
• 2SC3606
  EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)

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