Datu lapā PDF Par K4R881869 meklēšanas rezultāti

• Daļa Nr: K4R881869

  Ražotājs:
  SAMSUNG [Samsung semiconductor]

  Temperatūra:
  

  Apraksts
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM

  PDF izmērs: Kb PDF lapas: Page

  Pirkt K4R881869

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Saistītās puses nav

• K4R881869 SAMSUNG [Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869D SAMSUNG[Samsung semiconductor]
  256/288Mbit RDRAM(D-die)
• K4R881869I-DC Samsung
  Direct RDRAM Product Guide
• K4R881869M SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NBCCG6 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NCG6 Samsung
  512K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R881869M-NCK7 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NCK8 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM

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