Date PDF pentru 2SC195907 rezultatele de căutare
-
Partea nr: 2SC195907
Producator:
Toshiba SemiconductorTemperatura:
Descriere:
Silicon Epitaxial Type process)PDF Dimensiune: Kb PDF Pagini: Page
DatasheetPDF găsit 1 de potrivire documentele PDF interogare:
Date de descărcare:
2SC195907 PDF
Legate de nici o parte
- 2SC1953 Panasonic Semiconductor
- 2SC1953Q
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1953R
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1953S
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1953T
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 - 2SC1955
TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 800MA I(C) | TO-39 - 2SC1959 Toshiba
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS - 2SC195907 Toshiba Semiconductor
Silicon Epitaxial Type process) - 2SC1959GR
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92 - 2SC1959O
BJT - 2SC1959Y
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-92 - 2SC1959_07 Toshiba Semiconductor
Silicon PNP Epitaxial Type (PCT process)
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