Datasheet PDF pre K4E160412D výsledkami vyhľadávania
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Časť č: K4E160412D
Výrobca:
Samsung semiconductorTeplota:
Popis:
4Bit CMOS Dynamic with Extended DataVeľkosť PDF: Kb PDF Strany: Page
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K4E160412D PDF
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- K4E160411D Samsung semiconductor
4Bit CMOS Dynamic with Extended Data - K4E160411D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160411D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160412D Samsung semiconductor
4Bit CMOS Dynamic with Extended Data - K4E160412D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - K4E160412D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
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