Datablad PDF För K4R271669D-T Sökresultat
-
Del nr: K4R271669D-T
Tillverkare:
SAMSUNG[Samsung semiconductor]Temperatur:
Beskrivning:
128Mbit RDRAM(D-die)PDF Storlek: Kb PDF: Page
DatasheetPDF hittade 1 PDF-dokument som matchar din sökning:
Datablad Download:
K4R271669D-T PDF
Liknande Del nr
- K4R271669A SAMSUNG[Samsung semiconductor]
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669A-N(M)CK7 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R271669A-N(M)CK8 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R271669A-NB(M)CCG6 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R271669A-NBMCCG6 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669A-NMCK7 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669A-NMCK8 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R271669AM-CG6 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R271669AM-CK7 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R271669AM-CK8 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R271669AN-CG6 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq 600 MHz. - K4R271669AN-CK7 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R271669AN-CK8 Samsung
256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R271669B SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM - K4R271669B-MCG6 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM
English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam