Scheda PDF Per 3N161 risultati di ricerca

• N. parte: 3N161

  Produttore:
  Intersil

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  Descrizione:
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH

  PDF Dimensioni: Kb PDF Pagine: Page

  Comprare 3N161

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3N161 PDF

Parte n. connessi

• 3N100E MOTOROLA[Motorola,
  TMOS POWER AMPERES 1000 VOLTS
• 3N128 ETC[ETC]
  Silicon Transistor
• 3N142 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N143 General Electric Solid State
  Silicon Transistor
• 3N152 RICOH[RICOH electronics devices division]
  PWM/VFM Step-down DC/DC Converter
• 3N153 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N154 ETC[ETC]
  SILICON TRANSISTOR
• 3N155
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N158
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N159
  TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
• 3N161 Intersil
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
• 3N163 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N163-4 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N164 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N165 Calogic,
  Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

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