Produktark PDF For 3N161 Søkeresultater

• Part No: 3N161

  Produsent:
  Intersil

  Temperatur:
  

  Beskrivelse:
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH

  PDF Størrelse: Kb PDF Sider: Page

  Buy 3N161

DatasheetPDF funnet 1 PDF-dokumenter som samsvarer med søket ditt:

Produktark Last ned:
3N161 PDF

Relaterte Part No

• 3N100E MOTOROLA[Motorola,
  TMOS POWER AMPERES 1000 VOLTS
• 3N128 ETC[ETC]
  Silicon Transistor
• 3N142 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N143 General Electric Solid State
  Silicon Transistor
• 3N152 RICOH[RICOH electronics devices division]
  PWM/VFM Step-down DC/DC Converter
• 3N153 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N154 ETC[ETC]
  SILICON TRANSISTOR
• 3N155
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N158
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N159
  TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
• 3N161 Intersil
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
• 3N163 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N163-4 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N164 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N165 Calogic,
  Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam