PDF už 3N161 paieškos rezultatai

• Dalis Nr: 3N161

  Gamintojas:
  Intersil

  Temperatūra:
  

  Aprašymas:
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH

  PDF Dydis: Kb PDF Puslapiai: Page

  Pirkti 3N161

DatasheetPDF rasta +1 PDF dokumentus, atitinkančių jūsų užklausą:

Specifikacija Atsisiųsti:
3N161 PDF

Susijusios dalis jokiu

• 3N100E MOTOROLA[Motorola,
  TMOS POWER AMPERES 1000 VOLTS
• 3N128 ETC[ETC]
  Silicon Transistor
• 3N142 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N143 General Electric Solid State
  Silicon Transistor
• 3N152 RICOH[RICOH electronics devices division]
  PWM/VFM Step-down DC/DC Converter
• 3N153 ETC[ETC]
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• 3N154 ETC[ETC]
  SILICON TRANSISTOR
• 3N155
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N158
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N159
  TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
• 3N161 Intersil
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
• 3N163 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N163-4 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N164 Linear Integrated Systems
  P-CHANNEL ENHANCEMENT MODE
• 3N165 Calogic,
  Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam