Produktark PDF For K4E160812D Søkeresultater
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Part No: K4E160812D
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Samsung semiconductorTemperatur:
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8Bit CMOS Dynamic with Extended DataPDF Størrelse: Kb PDF Sider: Page
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K4E160812D PDF
Relaterte Part No
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2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160812D Samsung semiconductor
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2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
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