Tuotetiedot PDF- K4E151612D-T Hakutulokset

• Osa nro: K4E151612D-T

  Valmistaja:
  Samsung

  Lämpötila:
  

  Kuvaus:
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.

  Pdf koko: Kb PDF-sivut: Page

  Ostaa K4E151612D-T

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K4E151612D-T PDF

Teemat osa n: o

• K4E151611 Samsung semiconductor
  16Bit CMOS Dynamic with Extended Data
• K4E151611D Samsung semiconductor
  16Bit CMOS Dynamic with Extended Data
• K4E151611D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
• K4E151611D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
• K4E151612D Samsung semiconductor
  16Bit CMOS Dynamic with Extended Data
• K4E151612D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
• K4E151612D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.

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