Технические характеристики PDF для K4E151612D-T результаты поиска
-
Electronic component: K4E151612D-T
Произв:
SamsungТемпература:
Описание:
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.PDF Размер: Kb PDF Страниц: Page
DatasheetPDF найдено 1 PDF документы, соответствующие вашему запросу:
Технические характеристики Загрузить:
K4E151612D-T PDF
Похожие части нет
- K4E151611 Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - K4E151611D Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - K4E151611D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. - K4E151611D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. - K4E151612D Samsung semiconductor
16Bit CMOS Dynamic with Extended Data - K4E151612D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. - K4E151612D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam