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• Parte No: K4E151612D-T

  Fabricante:
  Samsung

  Temperatura:
  

  Descripción:
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.

  PDF Tamaño: Kb PDF Páginas: Page

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• K4E151612D Samsung semiconductor
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• K4E151612D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
• K4E151612D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.

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