Scheda PDF Per RFP10P12 risultati di ricerca

• N. parte: RFP10P12

  Produttore:
  GESS[GE

  Temperatura:
  

  Descrizione:
  P-CHANNEL ENHANCEMENT MODE POWER FIELD-EFFECT TRANSISTORS

  PDF Dimensioni: Kb PDF Pagine: Page

  Comprare RFP10P12

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RFP10P12 PDF

Parte n. connessi

• RFP10N12 GESS[GE
  N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
• RFP10N12L
  TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-220AB
• RFP10N15 INTERSIL[Intersil Corporation]
  150V 0.300 N-Channel Power MOSFETs
• RFP10N15L
  TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-220AB
• RFP10P03L INTERSIL[Intersil Corporation]
  0.200 Logic Level, P-Channel Power MOSFET
• RFP10P12 GESS[GE
  P-CHANNEL ENHANCEMENT MODE POWER FIELD-EFFECT TRANSISTORS
• RFP10P15 INTERSIL[Intersil Corporation]
  -10A, -150V, 0.500 P-Channel Power MOSFET

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