Date PDF pentru RFP10P12 rezultatele de căutare
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Partea nr: RFP10P12
Producator:
GESS[GETemperatura:
Descriere:
P-CHANNEL ENHANCEMENT MODE POWER FIELD-EFFECT TRANSISTORSPDF Dimensiune: Kb PDF Pagini: Page
DatasheetPDF găsit 1 de potrivire documentele PDF interogare:
Date de descărcare:
RFP10P12 PDF
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- RFP10N12 GESS[GE
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS - RFP10N12L
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-220AB - RFP10N15 INTERSIL[Intersil Corporation]
150V 0.300 N-Channel Power MOSFETs - RFP10N15L
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-220AB - RFP10P03L INTERSIL[Intersil Corporation]
0.200 Logic Level, P-Channel Power MOSFET - RFP10P12 GESS[GE
P-CHANNEL ENHANCEMENT MODE POWER FIELD-EFFECT TRANSISTORS - RFP10P15 INTERSIL[Intersil Corporation]
-10A, -150V, 0.500 P-Channel Power MOSFET
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