Datasheet PDF ل=== K4E171612D-T نتائج البحث
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الجزء رقم : K4E171612D-T
الصانع :
Samsungدرجة الحراره :
الوصف :
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.PDF الحجم : Kb PDF صفحات : Page
DatasheetPDF العثور على وثائق PDF 1 مطابقه الاستفسار :
Datasheet تحميل :
K4E171612D-T PDF
ذات الصلة جزءا لا
- K4E171611D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171611D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171611D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171612D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171612D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E171612D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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