Scheda PDF Per K4E171612D-T risultati di ricerca
-
N. parte: K4E171612D-T
Produttore:
SamsungTemperatura:
Descrizione:
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.PDF Dimensioni: Kb PDF Pagine: Page
DatasheetPDF trovati 1 documenti PDF che corrispondono ai criteri di ricerca:
Scheda di download:
K4E171612D-T PDF
Parte n. connessi
- K4E171611D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171611D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171611D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171612D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171612D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E171612D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
English
Chinese
Spanish
Arabic
Portuguese
Russian
Japanese
German
Korean
French
Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam