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Partea nr: K4E171612D-T
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SamsungTemperatura:
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1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.PDF Dimensiune: Kb PDF Pagini: Page
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- K4E171611D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171611D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171611D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171612D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171612D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E171612D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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