Datasheet PDF के लिए K4E171612D-T खोज परिणाम

• हिस्सा नहीं: K4E171612D-T

  निर्माता:
  Samsung

  तापमान:
  

  वर्णन:
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

  PDF का आकार: Kb PDF पेज: Page

  खरीदना K4E171612D-T

DatasheetPDF 1 PDF दस्तावेज़ों आपकी क्वेरी से मेल मिला:

Datasheet डाउनलोड करें:
K4E171612D-T PDF

संबंधित हिस्सा नहीं

• K4E171611D SAMSUNG[Samsung semiconductor]
  16Bit CMOS Dynamic with Extended Data
• K4E171611D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E171611D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E171612D SAMSUNG[Samsung semiconductor]
  16Bit CMOS Dynamic with Extended Data
• K4E171612D-J Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
• K4E171612D-T Samsung
  1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

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