Datasheet PDF За K4E171612D-T резултатите от търсенето
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Част No: K4E171612D-T
Производител:
SamsungТемпература:
Описание:
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.PDF Размер: Kb PDF Страници: Page
DatasheetPDF намерени 1 PDF документи, съответстващи на вашето запитване:
Datasheet Изтегли:
K4E171612D-T PDF
Свързани част не
- K4E171611D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171611D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171611D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E171612D SAMSUNG[Samsung semiconductor]
16Bit CMOS Dynamic with Extended Data - K4E171612D-J Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E171612D-T Samsung
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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