Datasheet PDF voor K4E160812D-B zoekresultaten

• Onderdeelnummer: K4E160812D-B

  Fabrikant:
  Samsung

  Temperatuur:
  

  Beschrijving:
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

  PDF Grootte: Kb PDF Pagina's: Page

  Kopen K4E160812D-B

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Verwante deel nr.

• K4E160811D SAMSUNG[Samsung semiconductor]
  8Bit CMOS Dynamic with Extended Data
• K4E160811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E160812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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