PDF-Datenblatt für  K4E160812D-B  Suchergebnisse

• Art-Nr: K4E160812D-B

  Hersteller:
  Samsung

  Temperatur:
  

  Beschreibung:
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

  PDF Größe: Kb PDF-Seiten: Page

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Verwandte Bestell-Nr

• K4E160811D SAMSUNG[Samsung semiconductor]
  8Bit CMOS Dynamic with Extended Data
• K4E160811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E160812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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