Datu lapā PDF Par K4E160812D-B meklēšanas rezultāti
-
Daļa Nr: K4E160812D-B
Ražotājs:
SamsungTemperatūra:
Apraksts
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.PDF izmērs: Kb PDF lapas: Page
DatasheetPDF konstatēts 1 PDF dokumentus, kas atbilst jūsu jautājumu:
Datu lapā Lejupielādēt:
K4E160812D-B PDF
Saistītās puses nav
- K4E160811D SAMSUNG[Samsung semiconductor]
8Bit CMOS Dynamic with Extended Data - K4E160811D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160811D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160812D Samsung semiconductor
8Bit CMOS Dynamic with Extended Data - K4E160812D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - K4E160812D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam