נתונים עבור PDF K4E160812D-B תוצאות חיפוש

• חלק לא: K4E160812D-B

  יצרן:
  Samsung

  טמפרטורה:
  

  תיאור:
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

  PDF גודל: Kb PDF דפים: Page

  לקנות K4E160812D-B

DatasheetPDF PDF נמצאו 1 מסמכים מתאימים את השאילתה:

נתונים הורד:
K4E160812D-B PDF

חלק לא קשורים

• K4E160811D SAMSUNG[Samsung semiconductor]
  8Bit CMOS Dynamic with Extended Data
• K4E160811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E160812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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