Datasheet PDF За BUL642D2 резултатите от търсенето
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Част No: BUL642D2
Производител:
SemiconductorТемпература:
Описание:
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation NetworkPDF Размер: Kb PDF Страници: Page
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BUL642D2 PDF
Свързани част не
- BUL642D2 Semiconductor
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network - BUL642D2G Semiconductor
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network - BUL64A SEME-LAB[Seme
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL64B SEME-LAB[Seme
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
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