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• Dalis Nr: BUL642D2

  Gamintojas:
  Semiconductor

  Temperatūra:
  

  Aprašymas:
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

  PDF Dydis: Kb PDF Puslapiai: Page

  Pirkti BUL642D2

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Susijusios dalis jokiu

• BUL642D2 Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL642D2G Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL64A SEME-LAB[Seme
  ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
• BUL64B SEME-LAB[Seme
  ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR

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