PDF-Datenblatt für BUL642D2 Suchergebnisse
-
Art-Nr: BUL642D2
Hersteller:
SemiconductorTemperatur:
Beschreibung:
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation NetworkPDF Größe: Kb PDF-Seiten: Page
DatasheetPDF gefunden 1 PDF-Dokumente, die Ihrer Suchanfrage:
Datenblatt Download:
BUL642D2 PDF
Verwandte Bestell-Nr
- BUL642D2 Semiconductor
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network - BUL642D2G Semiconductor
High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network - BUL64A SEME-LAB[Seme
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR - BUL64B SEME-LAB[Seme
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam