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• N. parte: BUL642D2

  Produttore:
  Semiconductor

  Temperatura:
  

  Descrizione:
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

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Parte n. connessi

• BUL642D2 Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL642D2G Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL64A SEME-LAB[Seme
  ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
• BUL64B SEME-LAB[Seme
  ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR

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