Tuotetiedot PDF- BUL642D2 Hakutulokset

• Osa nro: BUL642D2

  Valmistaja:
  Semiconductor

  Lämpötila:
  

  Kuvaus:
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

  Pdf koko: Kb PDF-sivut: Page

  Ostaa BUL642D2

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BUL642D2 PDF

Teemat osa n: o

• BUL642D2 Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL642D2G Semiconductor
  High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network
• BUL64A SEME-LAB[Seme
  ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
• BUL64B SEME-LAB[Seme
  ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR

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